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k7b801825b 256kx36 & 512kx18 synchronous sram - 1 - K7B803625B rev. 6.0 april 2006 8mb sync. burst sram specification 100 tqfp with pb & pb-free (rohs compliant) * samsung electronics reserves the right to change products or specification without notice. information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any license, express or implied, by estoppel or otherwise, to any intellectual property rights in samsung products or technology. all information in this document is provided on as "as is" basis without guarantee or warranty of any kind. 1. for updates or additional information about sams ung products, contact your nearest samsung office. 2. samsung products are not intended for use in life suppor t, critical care, medical, safety equipment, or simi- lar applications where product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procuremen t to which special terms or provisions may apply.
k7b801825b 256kx36 & 512kx18 synchronous sram - 2 - K7B803625B rev. 6.0 april 2006 document title 256kx36 & 512kx18-bit synchronous burst sram the attached data sheets are prepared and approved by samsung el ectronics. samsung electronics co., ltd. reserve the right to change the specifications. samsung electronics will evaluate and reply to yo ur requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. revision history rev. no. 0.0 0.1 0.2 1.0 2.0 2.1 3.0 4.0 5.0 6.0 remark preliminary preliminary preliminary final final final final final final final history initial draft add x32 org part and industrial temperature part 1. change scan order(1) form 4t to 6t at 119bga(x18) 1. final spec release 2. change i sb2 form 50ma to 60ma change ordering information( remove 225mhz at spb) 1. delete 119bga package 1. remove x32 organization 2. remove -85 speed bin 1. add the lead-free package type 1. add the overshoot timing 1. change ordering information draft date may. 18 . 2001 aug. 11. 2001 aug. 28. 2001 nov. 16. 2001 april. 01. 2002 april. 04. 2003 nov. 17. 2003 may 31, 2005 feb. 16. 2006 apri. 03. 2006
k7b801825b 256kx36 & 512kx18 synchronous sram - 3 - K7B803625B rev. 6.0 april 2006 8mb sb sram ordering information note 1. p(q) [package type] : p-pb free, q-pb 2. c(i) [operating temperature] : c-commercial, i-industrial 3. support only pb package parts. for pb-free package, use faster frequency parts. org. vdd (v) speed (ns) access time (ns) part number rohs avail. 512kx18 3.3 7.5 6.5 k7b801825b-p(q) 1 c(i) 2 65 3.3 8.5 7.5 k7b801825b-q 3 c(i) 2 75 ? 256kx36 3.3 7.5 6.5 K7B803625B-p(q) 1 c(i) 2 65 3.3 8.5 7.5 K7B803625B-q 3 c(i) 2 75 ?
k7b801825b 256kx36 & 512kx18 synchronous sram - 4 - K7B803625B rev. 6.0 april 2006 256kx36 & 512kx18-bit synchronous burst sram the K7B803625B and k7b801825b are 9,437,184-bit synchro- nous static random access me mory designed for high perfor- mance second level cache of pentium and power pc based system. it is organized as 256k(512k) words of 36(18) bits and inte- grates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache ram applications; gw , bw , lbo , zz. write cycles are internally self-timed and synchronous. full bus-width write is done by gw , and each byte write is per- formed by the combination of we x and bw when gw is high. and with cs 1 high, adsp is blocked to control signals. burst cycle can be initiated with either the address status pro- cessor(adsp ) or address status cache controller(adsc ) inputs. subsequent burst addresses are generated internally in the system s burst sequence and are controlled by the burst address advance(adv ) input. lbo pin is dc operated and determines burst sequence(linear or interleaved). zz pin controls power down state and reduces stand-by cur- rent regardless of clk. the K7B803625B and k7b801825b are fabricated using sam- sung s high performance cmos te chnology and is available in a 100pin tqfp and multiple power and ground pins are uti- lized to minimize ground bounce. general description features logic block diagram ? synchronous operation. ? on-chip address counter. ? self-timed write cycle. ? on-chip address and control registers. ? 3.3v+0.165v/-0.165v power supply. ? i/o supply voltage 3.3v+0.165v/-0.165v for 3.3v i/o or 2.5v+0.4v/-0.125v for 2.5v i/o ? 5v tolerant inputs except i/o pins. ? byte writable function. ? global write enable controls a full bus-width write. ? power down state via zz signal. ? lbo pin allows a choice of either a interleaved burst or a lin- ear burst. ? three chip enables for simple depth expansion with no data contention only for tqfp. ? asynchronous output enable control. ? adsp , adsc , adv burst control pins. ? ttl-level three-state output. ? 100-tqfp-1420a (lead and lead-free package) ? operating in commeical and industrial temperature range. clk lbo adv adsc adsp cs 1 cs 2 cs 2 gw bw we x oe zz dqa 0 ~ dqd 7 or dqa0 ~ dqb7 burst control logic burst 256kx36 , 512kx18 address control data-in address counter memory array register register logic control register control register a 0 ~a 1 a 0 ~a 1 or a 2 ~a 18 or a 0 ~a 18 dqpa ~ dqpd a 0 ~a 17 a 2 ~a 17 (x=a,b,c,d or a,b) dqpa,dqpb fast access times parameter symbol -65 -75 -85 unit cycle time t cyc 7.5 8.5 10 ns clock access time t cd 6.5 7.5 8.5 ns output enable access time t oe 3.5 3.5 4.0 ns output buffer
k7b801825b 256kx36 & 512kx18 synchronous sram - 5 - K7B803625B rev. 6.0 april 2006 pin configuration (top view) pin notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address fi eld and set the internal burst counter if burst is desired. 2. the pin 42 is reserved for address bit for the 16mb . symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 17 adv adsp adsc clk cs 1 cs 2 cs 2 we x(x=a,b,c,d) oe gw bw zz lbo address inputs burst address advance address status processor address status controller clock chip select chip select chip select byte write inputs output enable global write enable byte write enable power down input burst mode control 32,33,34,35,36,37,43 44,45,46,47,48,49,50 81,82,99,100 83 84 85 89 98 97 92 93,94,95,96 86 88 87 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,41,65,91 17,40,67,90 14,16,38,39,42,66 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) dqpc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 n.c. v dd n.c. v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss n.c. v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 a 6 a 7 cs 1 cs 2 we d we c we b we a cs 2 v dd v ss clk gw bw oe adsc adsp adv a 8 81 a 9 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 a 15 a 14 a 13 a 12 a 11 a 10 a 17 n.c. v dd v ss n.c. n.c. a 0 a 1 a 2 a 3 a 4 a 5 31 lbo a 16 K7B803625B(256kx36)
k7b801825b 256kx36 & 512kx18 synchronous sram - 6 - K7B803625B rev. 6.0 april 2006 pin configuration (top view) pin name notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address fi eld and set the internal burst counter if burst is desired. 2. the pin 42 is reserved for address bit for the 16mb . symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 18 adv adsp adsc clk cs 1 cs 2 cs 2 we x oe gw bw zz lbo address inputs burst address advance address status processor address status controller clock chip select chip select chip select byte write inputs output enable global write enable byte write enable power down input burst mode control 32,33,34,35,36,37,43 44,45,46,47,48,49,50 80,81,82,99,100 83 84 85 89 98 97 92 93,94 86 88 87 64 31 v dd v ss n.c. dqa 0 ~ a 7 dqb 0 ~ b 7 dqpa, pb v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,41,65,91 17,40,67,90 1,2,3,6,7,14,16,25,28,29, 30,38,39,42,51,52,53,56, 57,66,75,78,79,95,96 58,59,62,63,68,69,72,73 8,9,12,13,18,19,22,23 74,24 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) n.c. n.c. n.c. v ddq v ssq n.c. n.c. dqb 0 dqb 1 v ssq v ddq dqb 2 dqb 3 n.c. v dd n.c. v ss dqb 4 dqb 5 v ddq v ssq dqb 6 dqb 7 dqpb n.c. v ssq v ddq n.c. n.c. n.c. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 n.c. n.c. v ddq v ssq n.c. dqpa dqa 7 dqa 6 v ssq v ddq dqa 5 dqa 4 v ss n.c. v dd zz dqa 3 dqa 2 v ddq v ssq dqa 1 dqa 0 n.c. n.c. v ssq v ddq n.c. n.c. n.c. 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 a 6 a 7 cs 1 cs 2 n.c. n.c. we b we a cs 2 v dd v ss clk gw bw oe adsc adsp adv a 8 81 a 9 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 a 15 a 14 a 13 a 12 a 11 a 18 n.c. v dd v ss n.c. n.c. a 0 a 1 a 2 a 3 a 4 a 5 31 lbo a 16 k7b801825b(512kx18) a 17 a 10
k7b801825b 256kx36 & 512kx18 synchronous sram - 7 - K7B803625B rev. 6.0 april 2006 function description the K7B803625B and k7b801825b are synchronous sram designed to support the burst address accessing sequence of the power pc based microprocessor. al l inputs (with the exception of oe , lbo and zz) are sampled on rising clock edges. the start and duration of the burst access is controlled by adsc , adsp and adv and chip select pins. the accesses are enabled with the chip select signals and output enabled signals. wait states are in serted into the access wit h adv . when zz is pulled high, the sram will enter a power down state. at this time, internal state of the sram is preserved. when zz returns to low, the sram normally operates after 2cycles of wake up time. zz pin is pulled down internally. read cycles are initiated with adsp (or adsc ) using the new external address clocked into the on-chip address register when both gw and bw are high or when bw is low and we a, we b, we c, and we d are high. when adsp is sampled low, the chip selects are sampled active, and the output buffer is enabled with oe . the data of cell array accessed by t he current address are projected to the output pins. write cycles are also initiated with adsp (or adsc ) and are differentiated into two kinds of operations; all byte write operation and individual byte write operation. all byte write occurs by enabling gw (independent of bw and we x.), and individual byte wr ite is performed only when gw is high and bw is low. in K7B803625B, a 256kx36 organization, we a controls dqa0 ~ dqa7 and dqpa, we b controls dqb0 ~ dqb7 and dqpb, we c controls dqc0 ~ dqc7 and dqpc and we d controls dqd0 ~ dqd7 and dqpd. cs 1 is used to enable the device and conditions internal use of adsp and is sampled only when a new external address is loaded. adv is ignored at the clock edge when adsp is asserted, but can be sampled on the subsequent clock edges. the address increases internally for the next access of the burst when adv is sampled low. addresses are generated for the burst access as shown below, the starting point of the burst seque nce is provided by the extern al address. the burst address counter wraps around to its initial st ate upon completion. the burst sequence is determined by the s tate of the lbo pin. when this pin is low, linear burst sequence is selected. and this pin is high, interleaved burst sequence is selected. burst sequence table (interleaved burst) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0
k7b801825b 256kx36 & 512kx18 synchronous sram - 8 - K7B803625B rev. 6.0 april 2006 synchronous t ruth table notes : 1. x means "don t care". 2. the rising edge of clock is symbolized by . 3. write = l means write operation in write truth table. write = h means read operation in write truth table. 4. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adsp adsc adv write clk address accessed operation hxxxlx x n/a not selected llxlxxx n/a not selected lxhlxx x n/a not selected llxxlxx n/a not selected lxhxlx x n/a not selected lhllxx x external address begin burst read cycle lhlhlx l external address begin burst write cycle lhlhlx h external address begin burst read cycle xxxhhl h next address continue burst read cycle hxxxhl h next address continue burst read cycle xxxhhl l next address continue burst write cycle hxxxhl l next address continue burst write cycle xxxhhh h current address suspend burst read cycle hxxxhh h current address suspend burst read cycle xxxhhh l current address suspend burst write cycle hxxxhh l current address suspend burst write cycle write truth table ( x36) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( ). gw bw we a we b we c we d operation hhxxxx read hlhhhh read h l l h h h write byte a h l h l h h write byte b h l h h l l write byte c and d h l l l l l write all bytes lxxxxx write all bytes truth tables write truth table (x18) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( ). gw bw we a we b operation h h x x read h l h h read h l l h write byte a h l h l write byte b h l l l write all bytes l x x x write all bytes
k7b801825b 256kx36 & 512kx18 synchronous sram - 9 - K7B803625B rev. 6.0 april 2006 capacitance* (t a =25 c, f=1mhz) *note : sampled not 100% tested. parameter symbol test condition min max unit input capacitance c in v in =0v - 5 pf output capacitance c out v out =0v - 7 pf asynchronous truth table operation zz oe i/o status sleep mode h x high-z read ll dq l h high-z write l x din, high-z deselected l x high-z notes 1. x means "don t care". 2. zz pin is pulled down internally 3. for write cycles that following read cycles, the output buffers must be disabled with oe , otherwise data bus contention will occur. 4. sleep mode means power down state of which stand-by current does not depend on cycle time. 5. deselected means power down state of which stand-by current depends on cycle time. operating conditions at 3.3v i/o (0 c t a 70 c) * the above parameters are also guaranteed at industrial temperature range. parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 3.135 3.3 3.465 v ground v ss 000v operating conditions at 2.5v i/o (0 c t a 70 c) * the above parameters are also guaranteed at industrial temperature range. parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 2.375 2.5 2.9 v ground v ss 000v absolute maximum ratings* *note : stresses greater than those listed under "a bsolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other c onditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating condi tions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on v ddq supply relative to v ss v ddq v dd v voltage on input pin relative to v ss v in -0.3 to v dd +0.3 v voltage on i/o pin relative to v ss v io -0.3 to v ddq +0.3 v power dissipation p d 1.6 w storage temperature t stg -65 to 150 c operating temperature commercial t opr 0 to 70 c industrial t opr -40 to 85 c storage temperature range under bias t bias -10 to 85 c
k7b801825b 256kx36 & 512kx18 synchronous sram - 10 - K7B803625B rev. 6.0 april 2006 dc electrical characteristics (v dd =3.3v+0.165v/-0.165v, t a =0 c to +70 c) notes : the above parameters are also guaranteed at industrial temperature range. 1. reference ac operating conditions and characteristics for input and timing. 2. data states are all zero. 3. in case of i/o pins, the max. v ih =v ddq +0.3v parameter symbol test conditions min max unit notes input leakage current(except zz) i il v dd =max ; v in =v ss to v dd -2 +2 a output leakage current i ol output disabled, v out =v ss to v ddq -2 +2 a operating current i cc device selected, i out =0ma, zz v il , cycle time t cyc min -65 - 300 ma 1,2 -75 - 280 standby current i sb device deselected, i out =0ma, zz v il , f=max, all inputs 0.2v or v dd -0.2v -65 - 140 ma -75 - 130 i sb1 device deselected, i out =0ma, zz 0.2v, f=0, all inputs=fixed (v dd -0.2v or 0.2v) - 100 ma i sb2 device deselected, i out =0ma, zz v dd -0.2v, f=max, all inputs v il or v ih -60ma output low voltage(3.3v i/o) v ol i ol =8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh =-4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol =1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh =-1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.3* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.3 v 3 input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.3 v 3 (v dd =3.3v+0.165v/-0.165v,v ddq =3.3v+0.165/-0.165v or v dd =3.3v+0.165v/-0.165v,v ddq =2.5v+0.4v/-0.125v, t a =0to70 c) test conditions * the above parameters are also guaranteed at industrial temperature range. parameter value input pulse level(for 3.3v i/o) 0 to 3.0v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 20% to 80% for 3.3v i/o) 1.0v/ns input rise and fall time(measured at 20% to 80% for 2.5v i/o) 1.0v/ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1 v ddq v il v ddq +1.0v 20% t cyc (min) v ss v ih v ss -1.0v 20% t cyc (min) undershoot timing overshoot timing v ddq +0.5v v ss -0.5v
k7b801825b 256kx36 & 512kx18 synchronous sram - 11 - K7B803625B rev. 6.0 april 2006 ac timing characteristics (v dd =3.3v+0.165v/ -0.165v, t a =0 c to +70 c) notes : 1. the above parameters are also guaranteed at industrial temperature range. 2. all address inputs must meet the specified setup and hold times for all rising clock edges whenever adsc and/or adsp is sampled low and cs is sampled low. all other synchronous inputs must meet the spec ified setup and hold times whenever this device is chip selected . 3. both chip se lects must be active whenever adsc or adsp is sampled low in order for the this device to remain enabled. 4. adsc or adsp must not be asserted for at least 2 clock after leaving zz state. parameter symbol -65 -75 unit min max min max cycle time t cyc 7.5-8.5-ns clock access time t cd - 6.5 - 7.5 ns output enable to data valid t oe - 3.5 - 3.5 ns clock high to output low-z t lzc 2.5-2.5-ns output hold from clock high t oh 2.5-2.5-ns output enable low to output low-z t lzoe 0-0-ns output enable high to output high-z t hzoe - 3.5 - 3.5 ns clock high to output high-z t hzc - 3.8 - 4.0 ns clock high pulse width t ch 2.2-2.5-ns clock low pulse width t cl 2.2-2.5-ns address setup to clock high t as 1.5-2.0-ns address status setup to clock high t ss 1.5 - 2.0 -ns data setup to clock high t ds 1.5 - 2.0 -ns write setup to clock high (gw , bw , we x )t ws 1.5 - 2.0 -ns address advance setup to clock high t advs 1.5 - 2.0 -ns chip select setup to clock high t css 1.5 - 2.0 -ns address hold from clock high t ah 0.5-0.5-ns address status hold from clock high t sh 0.5-0.5-ns data hold from clock high t dh 0.5-0.5-ns write hold from clock high (gw , bw , we x )t wh 0.5-0.5-ns address advance hold from clock high t advh 0.5-0.5-ns chip select hold from clock high t csh 0.5-0.5-ns zz high to power down t pds 2-2-cycle zz low to power up t pus 2-2-cycle output load(b), (for t lzc , t lzoe , t hzoe & t hzc ) dout 353 ? / 1538 ? 5pf* +3.3v for 3.3v i/o 319 ? / 1667 ? fig. 1 * including scope and jig capacitance output load(a) dout zo=50 ? rl=50 ? vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o 30pf*
k7b801825b 256kx36 & 512kx18 synchronous sram - 12 - K7B803625B rev. 6.0 april 2006 clock adsp adsc address write cs adv oe data out timing waveform of read cycle notes : write = l means gw = l, or gw = h, bw = l, we x.= l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l t ch t cl t ss t sh t ss t sh t as t ah a1 a2 a3 burst continued with new base address t ws t wh t css t csh t advs t advh t oe t hzoe t lzoe t cd t oh (adv inserts wait state) t hzc q3-4 q3-3 q3-2 q3-1 q2-4 q2-3 q2-2 q2-1 q1-1 don t care undefined t cyc
k7b801825b 256kx36 & 512kx18 synchronous sram - 13 - K7B803625B rev. 6.0 april 2006 clock adsp adsc address write cs adv data in oe data out t ch t cl t ss t sh t as t ah a1 a2 a3 (adsc extended burst) t lzoe d2-1 d1-1 t css t csh (adv suspends burst) d2-2 d2-3 d2-4 d3-1 d3-2 d3-3 d2-2 d3-4 q0-3 q0-4 t ss t sh t ws t wh t advs t advh t ds t dh timing waveform of wrte cycle don t care undefined t cyc
k7b801825b 256kx36 & 512kx18 synchronous sram - 14 - K7B803625B rev. 6.0 april 2006 timing waveform of combination read/wrte cycle(adsp controlled, adsc =high) clock adsp address write cs adv oe data out t ch t cl t ds t dh q3-3 data in t oe t oh a1 a2 a3 d2-1 q3-1 q3-2 q3-4 t ss t sh t as t ah t ws t wh t advs t advh t lzoe t hzoe t cd t hzc t lzc don t care undefined t cyc q1-1
k7b801825b 256kx36 & 512kx18 synchronous sram - 15 - K7B803625B rev. 6.0 april 2006 timing waveform of single read/write cycle(adsc controlled, adsp =high) clock adsc address write cs adv oe data in t ch t cl t hzoe d6-1 data out t ws t wh t cd t oh t oe d5-1 d7-1 t ws t wh t lzoe t dh t ds a1 a2 a3 a4 a5 a6 a7 a8 a9 q3-1 q1-1 q2-1 q4-1 q8-1 q9-1 t css t csh t ss t sh don t care undefined t cyc
k7b801825b 256kx36 & 512kx18 synchronous sram - 16 - K7B803625B rev. 6.0 april 2006 d7-1 timing waveform of single read/write cycle(adsp controlled, adsc =high) clock adsp address write cs adv oe data in t ch t cl t hzoe data out t as t ah t cd t oh t oe d5-1 t lzoe t dh t ds a1 a2 a3 a4 a5 a6 a9 q3-1 q1-1 q2-1 q4-1 q8-1 q9-1 t css t csh t ss t sh a7 a8 d6-1 don t care undefined t cyc
k7b801825b 256kx36 & 512kx18 synchronous sram - 17 - K7B803625B rev. 6.0 april 2006 timing waveform of power down cycle clock adsp address write cs adv data in t ch t cl d2-2 oe t wh t hzoe t lzoe d2-1 a1 t ss t sh data out t pus a2 adsc q1-1 zz t as t ah t css t csh t oe t hzc t pds sleep state zz setup cycle normal operation mode zz recovery cycle t ws don t care undefined t cyc
k7b801825b 256kx36 & 512kx18 synchronous sram - 18 - K7B803625B rev. 6.0 april 2006 application information depth expansion data address clk ads cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 256kx36 sb sram (bank 0) cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 256kx36 sb sram (bank 1) clk address cache controller a [0:18] a [18] a [0:17] a [18] a [0:17] i/o [0:71] microprocessor clock adsp address data out interleave read timing (refer to non-interleave write timing for interleave write timing) bank 0 is selected by cs 2 , and bank 1 deselected by cs 2 q1-1 q1-2 q1-4 q1-3 oe data out t ss t sh a1 a2 write cs 1 a n+1 adv (bank 0) (bank 1) q2-1 q2-2 q2-4 q2-3 t as t ah t css t csh t ws t wh t advs t advh t oe t lzoe t hzc bank 0 is deselected by cs 2 , and bank 1 selected by cs 2 [0:n] don t care undefined t cd t lzc the samsung 256kx36 synchronous burst sram has two addi tional chip selects for simple depth expansion. this permits easy secondary cache upgrades from 256k depth to 512k depth without extra logic. (adsp controlled , adsc =high) *notes : n = 14 32k depth , 15 64k depth 16 128k depth , 17 256k depth 18 512k depth
k7b801825b 256kx36 & 512kx18 synchronous sram - 19 - K7B803625B rev. 6.0 april 2006 application information the samsung 512kx18 synchronous burst sram has two addi tional chip selects for simple depth expansion. depth expansion this permits easy secondary cache upgrades from 512k depth to 1m depth without extra logic. data address clk ads microprocessor cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 512kx18 sb sram (bank 0) cs 2 cs 2 clk adsc we x oe cs 1 address data adv adsp 512kx18 sb sram (bank 1) clk address cache controller a [0:19] a [19] a [0:18] a [19] a [0:18] i/o [0:71] clock adsp address data out interleave read timing (refer to non-interleave write timing for interleave write timing) bank 0 is selected by cs 2 , and bank 1 deselected by cs 2 q1-1 q1-2 q1-4 q1-3 oe data out t ss t sh a1 a2 write cs 1 a n+1 adv (bank 0) (bank 1) q2-1 q2-2 q2-4 q2-3 t as t ah t css t csh t ws t wh t advs t advh t oe t lzoe t hzc bank 0 is deselected by cs 2 , and bank 1 selected by cs 2 [0:n] don t care undefined t cd t lzc (adsp controlled , adsc =high) *notes : n = 14 32k depth , 15 64k depth 16 128k depth , 17 256k depth 18 512k depth , 19 1m depth
k7b801825b 256kx36 & 512kx18 synchronous sram - 20 - K7B803625B rev. 6.0 april 2006 package dimensions 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a (lead & lead-free) 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 units ; millimeters/inches

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